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Photo-expansion in Ge-As-S amorphous film monitored by digital holographic microscopy and atomic force microscopy

P. KNOTEK1,2, D. ARSOVA3, E. VATEVA3, L. TICHÝ1,*

Affiliation

  1. University of Pardubice, Faculty of Chemical Technology, Studentska 84, 532 10 Pardubice, Czech Republic
  2. Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences of Czech Republic, Prague and University of Pardubice, Czech Republic
  3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Using Digital Holographic Microscopy and Atomic Force Microscopy we unambiguously observed considerable photoexpansion at around 3.5 % in virgin as well as in annealed Ge26As7S67 amorphous films having the thickness around 740 nm. This photo-expansion seems to be relatively stable, since after one year ageing its value decreased from 26 nm to19 nm in annealed film, while no relaxation was observed for virgin film..

Keywords

Amorphous chalcogenide films, Photo-expansion, Digital Holographic Microscopy, Atomic Force Microscopy.

Submitted at: Jan. 22, 2009
Accepted at: April 28, 2009

Citation

P. KNOTEK, D. ARSOVA, E. VATEVA, L. TICHÝ, Photo-expansion in Ge-As-S amorphous film monitored by digital holographic microscopy and atomic force microscopy, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 391-394 (2009)