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Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films

M. S. IOVU1,* , I. A. VASILIEV1, E. P. COLOMEICO1, O. SHPOTYUK2

Affiliation

  1. Institute of Applied Physics, ASM, 5 Academiei str., Chisinau, MD-2028, R. Moldova
  2. Scientific Research Company “Carat”, Lviv, Ukraine

Abstract

The photo-capacitance relaxation of amorphous GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of non-exponentially function are deduced from the experimental data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method [1]..

Keywords

Amorphous films, Rigidity transition, Dielectric relaxation.

Submitted at: June 14, 2011
Accepted at: Nov. 23, 2011

Citation

M. S. IOVU, I. A. VASILIEV, E. P. COLOMEICO, O. SHPOTYUK, Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1478-1482 (2011)