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Photoelectric studies of n-InP/Orange dye/ITO cell



  1. Government College of Science, Wahdat Road Lahore-54570, Pakistan
  2. GIK Institute of Engineering Sciences and Technology, Topi, District Swabi-23640, Pakistan
  3. Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe-734025, Tajikistan


The photoelectrical behavior of n-InP/Orange dye/ITO sandwich type cell was investigated. In this cell the n-type indium phosphide and indium tin oxide (ITO) coated glass electrodes were employed and as electrolyte 0.5 wt.% solution of orange dye (OD) in distilled water was used. The inter-electrode distance in the n-InP/OD/ITO cell was 40 mm. Dark current-voltage characteristics of the cell showed rectification behavior with rectification ratio (RR) 3.97 at ±0.9 V. A zero offset voltage of 0.8 V was also observed, i.e. the presence of electrochemical effect. Photo-induced open-circuit voltage and short-circuit current, under modulated (in frequency range of 0–50 kHz) and unmodulated IR, Red, Green Yellow and Blue LEDs illuminations, were investigated and it was found that the cell is sensitive in the wavelength range of 475 nm – 750 nm. It was observed that open circuit voltage decreases and short-circuit current increases with concentration of OD in the solution. Investigation of directivity characteristics showed that the cell is sensitive in wide range of angles (±180o ). By investigations of optical absorption spectra of the OD solution, band diagram in the n-InP/OD/ITO interfaces was identified. Equivalent circuit of the cell was developed. Variations of voltage/current with time were recorded..


Strain sensor, Organic semiconductor, Orange dye, n-indium phosphide, Photoelectrochemical cell.

Submitted at: Aug. 15, 2014
Accepted at: Feb. 10, 2016


M. SALEEM, M. H. SAYYAD, KH. S. KARIMOV, K. KABUTOV, Photoelectric studies of n-InP/Orange dye/ITO cell, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 123-129 (2016)