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Photoinduced changes in sulphur rich Ge-As-S thin films♣

D. ARSOVA1,* , E. VATEVA1, V. PAMUKCHIEVA1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

The irreversible and reversible photoinduced (PI) changes in thin films of Ge 11.2As 18S 70.8 glass (Z = 2.4) have been studied. Glasses with compositions close to that of the Ge 2S 3-AsS3 system can be regarded as self-organized. The changes in the thickness, as well as in the refractive index and optical band gap energy, have been evaluated for films thicker than 0.5 μm, after photo- and thermal-treatments. A decrease in the magnitude of the irreversible photobleaching and reversible photodarkening has been obtained with decreasing film thickness. For nanosized films (90-100 nm) low-magnitude photobleaching is established, while photodarkening nearly disappears. The peculiarities of the reversible PI effects at these thicknesses are related to the self-organised structure. A comparison with results from our previous studies has revealed that for higher PI effects and conversion to reversible photobleaching in nanosized films, stressed-rigid Ge 2S 3-AsS3 compositions are favourable..

Keywords

Thin chalcogenide films, Optical properties, Photoinduced changes.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

D. ARSOVA, E. VATEVA, V. PAMUKCHIEVA, Photoinduced changes in sulphur rich Ge-As-S thin films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1253-1256 (2009)