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S. POLOSAN1,2,* , K. SHIMAMURA3, T. TSUBOI1
Affiliation
- Faculty of Engineering, Kyoto Sangyo University, Kyoto 603-8555, Japan
- National Institute of Materials Physics, Bucharest-Magurele, PO Box MG-7, 077125, Romania
- Optronic Materials Center, National Institute for Materials Science, Tsukuba 305-0044, Japan
Abstract
Photoluminescence properties of Er3+-doped calcium niobium gallium garnet (CNGG) disordered crystals have been studied in the range of 200-2000 nm at 10-290 K. In addition to emission bands due to Er3+, a broad emission band is observed at 470 nm. From the emission spectra that were obtained by various excitations, level assignment has been established for the emission bands. Different temperature dependences are observed between the emission bands at 522 and 543 nm. This is explained using non-radiative phonon relaxation between the 2H11/2 and 4S3/2 states. Besides the 1535 nm Er3+ emission band, near infrared emission bands are observed at 860 and 1240 nm, which are attributed to the transitions from the 4S3/2 state to the 4I13/2 and 4I11/2 states, respectively..
Keywords
Photoluminescence, CNGG disordered crystal, Near infrared emission, Non-radiative transition.
Submitted at: Feb. 28, 2008
Accepted at: March 17, 2008
Citation
S. POLOSAN, K. SHIMAMURA, T. TSUBOI, Photoluminescence processes in Er3+-doped Calcium Niobium Gallium Garnet (CNGG) crystals, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 3, pp. 528-532 (2008)
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