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Photoluminescence quenching in disordered semiconductors from point of view of the barrier-cluster-heating model

I.BANIK1,* , M. POPESCU2,*

Affiliation

  1. Slovak University of Technology, 813 68 Bratislava, Radlinského 11, Slovak Republic
  2. National Institute R&D of Materials Physics, Bucharest-Magurele, P. O. Box MG.7, Romania

Abstract

The aim of this article is in the first place to familiarize the readers with barrier-cluster-heating model of the non-crystalline semiconductors, then briefly and digestedly present some results achieved by physical phenomena explanation in noncrystalline semiconductors within the frame of this model. The barrier-cluster-heating model of disordered semiconductor gives new view on photoluminescence in disordered semiconductors, too. This model enables to explain Stokes shift, Street´s empirical law, fatigue effect, PLE-characteristic, electric field influence on photoluminescence, and some other physical phenomena in disordered semiconductors, including the photoinduced structural changes..

Keywords

Photoluminescence, Disordered semiconductors, Barrier-cluster-heating model, Photoluminescence quenching, Street´s empirical law, Fatigue effect, PLE-characteristics.

Submitted at: April 23, 2014
Accepted at: Nov. 13, 2014

Citation

I.BANIK, M. POPESCU, Photoluminescence quenching in disordered semiconductors from point of view of the barrier-cluster-heating model, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1275-1284 (2014)