Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
Z. AMARA1, M. KHADRAOUI1,* , R. MILOUA1, M. N. AMROUN1, K. SAHRAOUI1
- Laboratoire d’Elaboration et de Caractérisation des Matériaux LECM, département d’électronique, University of Djillali Liabes, BP89, Sidi Bel Abbés 22000, Algeria
Bismuth sulfide Bi2S3 thin films were deposited by Spray Pyrolysis method at 260°C. X-Ray Diffraction has been used to investigate the crystalline structure and the crystallite size of Bi2S3 thin films. The optical band gap has been determined by UV-VIS-NIR spectrophotometry. Using the measured absorption coefficient data, we estimated the expected absorption capacity and photocurrent of the thin films. The deposited thin films yield a maximum photocurrent of 33.6 mA/cm2. Halleffect measurements showed that Bi2S3 thin films have a lower value of resistivity of 2.82×10-2 Ω cm. This value is optimal for the improvement of solar cells based Bi2S3 thin films. AC conductivity obeys to the relation Aωs. The decrease of the exponent S with temperature reveals to understand the behavior hopping model CBH. The density of states N(Ef) was in order of 1018 eV-1 cm-3..
Bi2S3, Thin films, Dielectric properties, Spray pyrolysis.
Submitted at: Jan. 9, 2019
Accepted at: April 9, 2020
Z. AMARA, M. KHADRAOUI, R. MILOUA, M. N. AMROUN, K. SAHRAOUI, Photovoltaic and dielectric properties of Bi2S3 thin films deposited by spray pyrolysis technique, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 3-4, pp. 163-170 (2020)
- Download Fulltext
- Downloads: 1 (from 1 distinct Internet Addresses ).