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JYOTI GAHLAWAT1, MANJEET SINGH2,* , UNITA DAHIYA1
- Department of Physics, Baba Mastnath University, AsthalBohar, Rohtak-124021, India
- Department of Physics, Government College, Matanhai,Jhajjar –124106, India
In the present analytical investigation, we have explored the piezoelectric and electrostrictivecontributions tooptical parametric amplification of acoustic phonons in magnetized doped III-V semiconductors. Expressionsare obtained foreffective second-order optical susceptibilityand threshold pump electric field for the onset of optical parametric amplification process. Parametric gain coefficients are obtained for different cases, viz. piezoelectric coupling only,electrostrictive coupling only, and piezoelectric and electrostrictive coupling both;well above the threshold pump field. Numerical estimatesaremade forn-type InSb crystalkept in an external magnetostatic field andilluminated by a pulsed CO2laser. The results indicate that the threshold pump field for the onset of optical parametric amplification and parametric gain coefficients canbe tailored by monitoring thematerial parameters (such as carrier concentration, piezoelectric and/or electrostrictive coefficients), dispersion characteristicsandanexternal magnetostatic field. It isfound that proper selection of externally applied magnetostaticfield reduces threshold pump field and enhances gain profile of the optical parametric amplifier. The results strongly suggest the potential of n-InSb-CO2laser system for the fabrication of optical parametric amplifier..
Optical parametric amplification, Piezoelectricity, Electrostriction, Acoustic phonons, III-V semiconductors.
Submitted at: Nov. 6, 2019
Accepted at: April 8, 2021
JYOTI GAHLAWAT, MANJEET SINGH, UNITA DAHIYA, Piezoelectric and electrostrictive contributions to optical parametric amplification of acoustic phonons in magnetized doped III-V semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 3-4, pp. 183-192 (2021)
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