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Polycrystalline silicon thin film prepared by aluminum-induced crystallization with native silicon oxide at the aluminum and silicon interface

ZHENGXIA TANG1, HONGLIE SHEN1,* , LINFENG LU1, FENG JIANG1, YAN GUO1, JIANCANG SHEN2

Affiliation

  1. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing, 210016, China
  2. National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing, 210093, China

Abstract

Polycrystalline Si (poly-Si) thin films with the largest grain size of about 100 m were prepared by aluminum-induced crystallization with native SiO2 at the Al and Si interface. The Al and amorphous (a-Si) were deposited by radio frequency magnetron sputtering. The surface of the poly-Si thin film is smooth. The poly-Si thin film has double layers and the upper layer has better crystalline quality. Both the smooth surface and the high crystalline quality of the upper layer make the poly-Si thin film from a-Si/Al structure more suitable for further epitaxy..

Keywords

Polycrystalline silicon, Aluminum-induced crystallization, Native silicon oxide, Magnetron sputtering.

Submitted at: June 26, 2009
Accepted at: Aug. 7, 2009

Citation

ZHENGXIA TANG, HONGLIE SHEN, LINFENG LU, FENG JIANG, YAN GUO, JIANCANG SHEN, Polycrystalline silicon thin film prepared by aluminum-induced crystallization with native silicon oxide at the aluminum and silicon interface, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 8, pp. 1077-1081 (2009)