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Practical considerations and electronic properties for CdTe/Si heterojunction solar cell

WAGAH F. MOHAMMAD1

Affiliation

  1. Communications & Electronics Dept., Faculty of Engineering, P.O. Box: 1, Philadelphia University, JORDAN

Abstract

The In-doped CdTe/Si (p) Heterostructure was fabricated and its electrical and photoelectrical properties were studied and interpreted. During the fabrication processes of CdTe/Si heterojunction, some practical troubles were encountered. However, the important one was the formation of the SiO2 thin oxide layer on the soft surface of the Si during the formation of the back contact. The silicon wafer was subjected to different chemical treatments in order to remove the thin oxide layer from the silicon wafer surfaces. It was found that the heterojunction with Si (p+) substrate gave relatively high open circuit voltage comparing with that of Si (p) substrate. Also an electroforming phenomenon had been observed in this structure for the first time which may be considered as a memory effect. It was observed that there are two states of conduction, nonconducting state and conducting state. The normal case is the non-conducting state. As the forward applied voltage increased beyond threshold value, it switches into the conducting state and remains in this state even after the voltage drops to zero.

Keywords

CdTe solar cells, CdTe/Si heterojunction, In-doped CdTe..

Submitted at: June 10, 2011
Accepted at: Oct. 20, 2011

Citation

WAGAH F. MOHAMMAD, Practical considerations and electronic properties for CdTe/Si heterojunction solar cell, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 10, pp. 1289-1293 (2011)