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Preparation and characterization of Mn-doped ZnO thin films

G. G. RUSU1, P. GORLEY2, C. BABAN1, A. P. RAMBU1, M. RUSU1

Affiliation

  1. Faculty of Physics „Al. I. Cuza” University, 11 Carol I Bldv, RO-700506, Iasi, Romania
  2. Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., Chernivtsi, 58012, Ukraine

Abstract

The Mn doped ZnO thin films (5.9 wt. %) (d = 140 – 300 nm) were prepared by thermal oxidation in ambient conditions, at 775 K, of the multilayered Zn/Mn thin stacks deposited in vacuum onto glass substrates by a modified version of two source evaporation technique. The XRD investigations revealed that the as doped ZnO films present a polycrystalline wurtzite structure with the predominant orientation of plane (002) parallel to the substrate surface. In respect of non-doped ZnO thin films, those Mn doped present a lower optical transmittance and an increase of the optical band gap. The temperature dependence of electrical conductivity (of about 1.6x10–6 Ω–1.cm–1 at room temperature) of heat treated Mn doped ZnO films presents semiconducting characteristics..

Keywords

Doped zinc Oxide, Thin films, X-ray diffraction, Optical properties, Electrical properties.

Submitted at: April 7, 2010
Accepted at: April 26, 2010

Citation

G. G. RUSU, P. GORLEY, C. BABAN, A. P. RAMBU, M. RUSU, Preparation and characterization of Mn-doped ZnO thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 4, pp. 895-899 (2010)