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Preparation and characterization of ZnSxCdSe1-x /ZnTe heterojunctions

R. P. VIJAYA LAKSHMI1, R. VENU GOPAL1, D. SREEKANTHA REDDY2,* , B. K. REDDY3

Affiliation

  1. Department of Physics, Govt. Degree College, Puttur, Chittoor Dt. A.P. India
  2. Department of Physics, Chungbuk National University, Cheongju, Republic of Korea
  3. Department of Physics, S.V.University, Tirupati, A.P. India

Abstract

Thin films of ZnTe, ZnTe:Cu have been grown on glass substrates by vacuum evaporation. Doping increases the conductivity by three orders of magnitude. The optical band gap and structure were also determined. Heterojunctions of ZnTe/ZnSxCdSe1-x were prepared and characterized by dark J-V, C-V and Photovoltaic studies. The dark conductivity studies with temperature shows the dominance of tunneling mechanism in these heterojunctions. The open circuit voltages obtained for ZnTe/ZnSxCdSe1-x were in the range 0.42 – 0.50 V. The short circuit current densities are in the range 5.55 – 7.05 mA/cm2 and efficiencies varied in the range 1.35 – 2.05 %..

Keywords

Solar cells; ZnSxCdSe1-x/ZnTe heterojucntions; Electrical properties; Thermal evaporation.

Submitted at: Jan. 7, 2008
Accepted at: Feb. 18, 2008

Citation

R. P. VIJAYA LAKSHMI, R. VENU GOPAL, D. SREEKANTHA REDDY, B. K. REDDY, Preparation and characterization of ZnSxCdSe1-x /ZnTe heterojunctions, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 2, pp. 446-450 (2008)