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Production of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time



  1. Department of Physics, Faculty of Science, Dicle University, Diyarbakir, Turkey
  2. Department of Physics, Faculty of Science, University of Selcuk, 42031 Selcuklu, Konya, Turkey
  3. Directorate of High Technology Research and Application Center, University of Selcuk, 2031 Selcuklu, Konya, Turkey
  4. Directorate of Laser Induced Proton Therapy Application and Research Center, University of Selçuk, Konya, Turkey


Cu2SnS3 thin films have been produced using spin coating method for 30 and 40 sccm sulphur flux rate during three annealing times of 15, 30 and 60 minutes at 550 oC. Crystal properties, morphological structure, phase structure, elemental contents and optical properties of Cu2SnS3 thin films have comprehensively been studied by XRD, SEM, Raman, EDX, UV-vis, and photoluminescence analysis, respectively. The crystalline size, dislocation density, microstrain and crystalline number of Cu2SnS3 thin films have been calculated. Cu2SnS3-A2 thin film annealed for 30 minutes has the best crystal structure. Cu2SnS3 thin films contain four different phases depending on sulphur flux rate and the annealing temperature duration. In addition, their band gaps, extinction coefficients and Urbach energies were determined. The refractive index and high frequency dielectric constant of Cu2SnS3 thin film were calculated using Herve and Vandamme, Moss and Ravindra relations and the values found were found to be compatible with one another. The skin depth and optical conductivity of Cu2SnS3 thin films were obtained. While the photon energy increased, their skin depth decreased and the optical conductivity considerably increased..


Cu2SnS3, CTS Thin film, Crystalline size, Refractive index, Skin depth.

Submitted at: May 11, 2022
Accepted at: April 5, 2023


ILHAN CANDAN, SERAP YIGIT GEZGIN, SİLAN BATURAY, HAMDİ SUKUR KILIC, Production of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 3-4, pp. 191-202 (2023)