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Programming speed, cycle-life and failure mechanisms in binary and multistate ovonic (phase-change) chalcogenide memory devices

S. KOSTYLEV1

Affiliation

  1. Onyx International Consulting, LLC., 1208 Lenox Rd, Bloomfield Hills, MI 48304, USA

Abstract

Sensitivity of resistance-current characteristic and programming speed to material and geometry of electrical contacts is demonstrated for same chalcogenide memory alloys. It was established that set speed is more sensitive to changes in top (positive) contact properties. Reset speed was found mostly dependent on bottom (negative) contact lateral properties: electro- and thermo-conductivity. Single fundamental failure mechanism: deterioration of programming speed is suggested. Failure modes and mechanisms specific only for multistate memory together with several practical ways of either using failure phenomena of avoiding failure are described..

Keywords

Phase-change memory, Chalcogenide, Ovonic, Programming speed.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

S. KOSTYLEV, Programming speed, cycle-life and failure mechanisms in binary and multistate ovonic (phase-change) chalcogenide memory devices, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1972-1982 (2009)