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Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

HUI LI1, ZHU WANG1,* , KAI ZHOU1, JINGBIAO PANG1, JUNYU KE1, YOUWEN ZHAO2

Affiliation

  1. epartment of Physics, Wuhan University, Wuhan 430072, China
  2. Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Abstract

Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 oC. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation..

Keywords

GaSb, Proton irradiation, Defects, Positron lifetime, Photoluminescence.

Submitted at: April 9, 2009
Accepted at: Aug. 7, 2009

Citation

HUI LI, ZHU WANG, KAI ZHOU, JINGBIAO PANG, JUNYU KE, YOUWEN ZHAO, Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 8, pp. 1122-1126 (2009)