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Pulsed laser deposition of homo- and hetero-epitaxial thin films of the exotic La5Ca9Cu24O41 compound on oxide and Si substrates

M. PERVOLARAKI1,* , S. SINGH2, G.I. ATHANASOPOULOS1, R. SAINT-MARTIN2, A. REVCOLEVSCHI2, J. GIAPINTZAKIS1

Affiliation

  1. Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av. P.O. Box 20537, Nicosia, 1678, Cyprus
  2. Laboratoire de Physico-Chimie de L'Etat Solide, UMR 8182, Université Paris-Sud, 91405 Orsay Cedex, France

Abstract

Pristine and transition metal-doped La5Ca9Cu24O41 thin films were fabricated by pulsed laser deposition in oxygen atmosphere. The effect of magnetic doping, type of substrate and growth temperature on the crystallographic orientation and surface topography of the films was investigated. X-ray diffraction data reveals that pristine La5Ca9Cu24O41 films are grown homo- and hetero-epitaxially on La5Ca9Cu24O41 (0 0 1) and La4Ca10Cu24O41 (0 0 1) single crystals, respectively, whereas those deposited on Si (0 0 1) single crystals are highly b-axis oriented. In addition, (1%) Ni-, Co- and Fe- doped La5Ca9Cu24O41 films fabricated on SrTiO3 (0 0 1), MgO (0 0 1) and Si (0 0 1) substrates are highly b-axis oriented..

Keywords

La5Ca9Cu24O41, Homo-epitaxy, Hetero-epitaxy, Pulsed laser deposition.

Submitted at: June 30, 2009
Accepted at: Feb. 27, 2010

Citation

M. PERVOLARAKI, S. SINGH, G.I. ATHANASOPOULOS, R. SAINT-MARTIN, A. REVCOLEVSCHI, J. GIAPINTZAKIS, Pulsed laser deposition of homo- and hetero-epitaxial thin films of the exotic La5Ca9Cu24O41 compound on oxide and Si substrates, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 641-645 (2010)