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Quantitative analysis of boron in wafers and MG silicon using laser induced breakdown spectroscopy

S. DARWICHE1,* , M. BENMANSOUR2, N. ELIEZER3, D. MORVAN3

Affiliation

  1. Laboratoire de Génie des Procédés Plasmas et Traitement de Surfaces (LGPPTS)- EA3492
  2. UPMC Université Pierre et Marie Curie 11, rue Pierre et Marie Curie – 75005 Paris FRANCE
  3. ENSCP – Chimie ParisTech

Abstract

Laser Induced Breakdown Spectroscopy, LIBS, is an analytical method which allows very fast measurement of the composition of any material by atomic emission spectroscopy, without sampling. LIBS is a promising tool for the analysis of metallurgical and photovoltaic grade silicon. The high sensitivity of the technique (10-7 g/g) permits characterization of the purity of silicon which has been treated by various processes. Technical aspects of LIBS will be presented with regard to the optimization of the method for the analysis of silicon, notably for boron quantification. These include the use of sample chamber purge gas and the temporal gating of laser pulse and emissions measurement..

Keywords

LIBS, MG silicon, Boron, Quantification.

Submitted at: June 16, 2009
Accepted at: Feb. 27, 2010

Citation

S. DARWICHE, M. BENMANSOUR, N. ELIEZER, D. MORVAN, Quantitative analysis of boron in wafers and MG silicon using laser induced breakdown spectroscopy, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 681-685 (2010)