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R esearch and p reparation of high quality and high utilization polycrystalline silicon ingot

LUO DAWEI1,2,* , YANG QIAN1, LI JUNFENG1,2, LONG JIANPING1,2

Affiliation

  1. College of Materials and Chemistry Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China
  2. Mineral Resources Chemical Sichuan University Laboratory, Chengdu University of Technology, Chengdu, 610059, China

Abstract

An improved furnace was designed to reduce the carbon and oxygen impurity of multicrystalline silicon during unidirectional soli dification process. The flow pattern of impurity gas at the top of the silicon melt can be significantly improved under the small cover conditions and the impurity gas eddy currents can also be avoided. The number of silicon block containing inclusions sig nificantly reduces under the conditions of small cover plate. Meantime t he carbon content at the head and tail of ingot reduced from 10.2 ppma and 4.52 ppma to 7.78 ppma and 2.1ppma and t he oxygen content at the head and tail of ingot reduced from 0.7ppma and 12.96ppma to 0.46ppma and 11.3 ppma, respectively. The utilization of the entire ingot has also be en improved from 70.1% to 72.1%, which is significantly higher than that of the ordinary ingot under small cover condition.

Keywords

Directional solidification systems Polycrystalline silicon ; Ingot utilization ; Impurity content.

Submitted at: May 13, 2014
Accepted at: May 7, 2015

Citation

LUO DAWEI, YANG QIAN, LI JUNFENG, LONG JIANPING, R esearch and p reparation of high quality and high utilization polycrystalline silicon ingot, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 5-6, pp. 839-845 (2015)