Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
R. ERTUĞRUL1, A. TATAROĞLU1,*
- Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara, Turkey
The effects of gamma-radiation on the dielectric properties of Au/Si3N4/n-Si/Au (MIS) structure with Si3N4 thin film prepared by r.f. magnetron sputtering were investigated by using capacitance-voltage and conductance-voltage measurements. The capacitance (C) and conductance (G) measurements were performed at five different frequency values (1, 10, 100, 500 and 1000 kHz) before and after irradiation in the radiation dose range of 2 kGy to 100 kGy. The dielectric parameters of the MIS structure such as dielectric constant (ε ' ), dielectric loss (ε ''), loss tangent (tanδ), ac conductivity (ac) and electric modulus (M) were calculated from these measurements. The measured value of C and G decreases with increase in radiation dose and frequency. After irradiation, the decrease in capacitance is due to the irradiation-induced defects at the interface. Also, the calculated value of the ε ' and ε '' decreases with the increase of radiation dose and frequency. In addition, while the value of ac decreases with the increasing radiation dose, it increases with the increasing frequency. As a result, the dielectric parameters of the structure are quite sensitive to radiation..
MIS structure; Radiation effect; Dielectric Properties; Conductivity.
Submitted at: Aug. 6, 2015
Accepted at: Sept. 29, 2016
R. ERTUĞRUL, A. TATAROĞLU, Radiation effects on dielectric properties of MIS structure with Si3N4 thin film prepared by r.f. magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 9-10, pp. 798-802 (2016)
- Download Fulltext
- Downloads: 81 (from 54 distinct Internet Addresses ).