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Radiation-induced extended free-volume defects in mixed ternary Ge-As/Sb-S glasses studied with PALS technique

O. I. SHPOTYUK1,2,* , J. FILIPECKI2, V.O. BALITSKA1,3

Affiliation

  1. Institute of Materials, Scientific Research Company “Carat”, 202 Stryjska str., 79031 Lviv, Ukraine
  2. Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, Czestochowa 42201, Poland
  3. Lviv State University of Vital Function Safety, 35 Kleparivska str., 79023,Lviv, Ukraine

Abstract

Under-coordinated topological defects caused by high-energy γ-irradiation can be a reason for significant changes in positron annihilation lifetime spectra of multicomponent chalcogenide glasses within ternary Ge-As(Sb)-S systems. In case of negatively-charged sulphur and arsenic atoms, the excess of free volume is quite enough to produce detectable input in defect-related channel of positron trapping, while under-coordinated negatively-charged germanium atoms are nondetectable with this technique because of low value of associated free volumes..

Keywords

Chalcogenide glassy, Topological defects, Positron life-time spectra.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

O. I. SHPOTYUK, J. FILIPECKI, V.O. BALITSKA, Radiation-induced extended free-volume defects in mixed ternary Ge-As/Sb-S glasses studied with PALS technique, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2079-2082 (2009)