"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Radioluminescence in ZnO: effect of chemical modification

A. ISMAIL1,* , J. AL ABDULLAH1, R. SHWEIKANI1, B. JERBY1

Affiliation

  1. Atomic Energy Commission of Syria, Protection and Safety Department, Damascus, P. O. Box 6091, Syria

Abstract

The radioluminescence (RL) response of zinc oxide (ZnO) was investigated for alpha particle detection. The present study reports the chemical modification of bulk ZnO for enhancing the RL property of oxide. The treated oxide samples were characterized with different techniques such as XRD, XPS, SEM and in terms of average pore radius. The photoluminescence (PL) and RL properties of all samples were also investigated. Results showed an important relation between the PL integrated emission intensity of the green-yellow bands and the type of solvent. This was mainly explained by the increase of the oxygen defects in ZnO, which was confirmed by the XPS results. The RL results of the treated ZnO were improved by the chemical treatment of the bulk oxide. The obtained results confirmed the chemical treatment as an alternative method for ZnO preparation with improved properties. The preliminary results showed an increase in the PL and RL response with the decrease of the average pore radius. However, further experiments are still needed in order to better study the correlation between chemically produced defects and RL response..

Keywords

ZnO, Chemical modification, Photoluminescence, Radioluminescence.

Submitted at: July 26, 2015
Accepted at: June 7, 2017

Citation

A. ISMAIL, J. AL ABDULLAH, R. SHWEIKANI, B. JERBY, Radioluminescence in ZnO: effect of chemical modification, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 5-6, pp. 389-394 (2017)