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Raman study of Si nanoparticles formation in the annealed SiOx and SiOx:Er,F films on sapphire substrate

A.S. NIKOLENKO1, M.V. SOPINSKYY1,* , V.V. STRELCHUK1, L.I. VELIGURA1, V.V. GOMONOVYCH1

Affiliation

  1. V. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine

Abstract

In this work the silicon nanoparticle formation caused by structural-phase transformations in the SiOx and SiOx:Er,F films evaporated onto sapphire substrate is studied. These transformations are induced by moderate temperatures annealing (650–1000°C). It was established that the crystallization of a-Si nanoparticles is much more intensive in the annealed SiOx:Er,F films as compared to the annealed SiOx films, and the origination of crystalline silicon phase takes place near the interface SiOx:Er,F film/Al2O3 substrate. The obtained results are explaining based on analysis of available literature data on behaviour of Er and F in silicon and Si−O systems..

Keywords

Nanostructures, Erbium, Silicon, SiO2, Fluorine.

Submitted at: Oct. 17, 2011
Accepted at: Feb. 20, 2012

Citation

A.S. NIKOLENKO, M.V. SOPINSKYY, V.V. STRELCHUK, L.I. VELIGURA, V.V. GOMONOVYCH, Raman study of Si nanoparticles formation in the annealed SiOx and SiOx:Er,F films on sapphire substrate, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 120-124 (2012)