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Realization of porous silicon photonic bandgap optical sensor devices

P. N. PATEL1, VIVEKANAND MISHRA1,* , (SMIEEE)1

Affiliation

  1. Electronics Engineering Department, S. V. National Institute of Technology, Surat-395007, Gujarat, India

Abstract

Recently, Porous Silicon (PS) is emerged as a new, unique and promising material for the optoelectronic devices and the sensing applications. This paper reports the feasibility for realization of one dimensional (1D) PS Photonic Bandgap (PBG) sensor devices. Different 1D-PSPBG sensor device structures such as single layer, Distributed Bragg Reflector (DBR) and microcavity were fabricated by electrochemical anodization of crystalline silicon wafer and proposed as a large surface area matrix for optical sensing applications. The refractive index of the 1D-PSPBG structure is tuned by changing current density and the thickness by etching time. Wavelength shift (Δλ) in the measured reflectance spectra of prepared structures were analyzed for the detection of the analyte in the porous structure. The sensing device performance is tested by the different organic chemicals and it showed good linear relation between the refractive index of analyte inside the pores and the wavelength shift..

Keywords

Porous silicon, Photonic bandgap structures, Optical sensor, Electrochemical anodization.

Submitted at: Feb. 13, 2012
Accepted at: March 13, 2014

Citation

P. N. PATEL, VIVEKANAND MISHRA, (SMIEEE), Realization of porous silicon photonic bandgap optical sensor devices, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 269-275 (2014)