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Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals

N. M. GASANLY1

Affiliation

  1. Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

Abstract

The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400−1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispersion energies, and the zero-frequency dielectric constants and refractive indices were determined..

Keywords

Optical properties, Refractive index, Semiconductors.

Submitted at: Dec. 9, 2010
Accepted at: Jan. 26, 2011

Citation

N. M. GASANLY, Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 1, pp. 49-52 (2011)