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Role of nitrogen pressure on structural and optical properties of AlN films synthesized by thermal evaporation

I. A. KHAN1,* , B. HASSAN1, S. A. HUSSAIN1, S. PERVAIZ1

Affiliation

  1. Department of Physics, Government College University Faisalabad, 38000, Pakistan

Abstract

Surface properties of AlN films synthesized by thermal evaporator for various nitrogen pressures (NP) are investigated. XRD patterns confirms the synthesis of amorphous and crystalline AlN films. SEM analysis reveals the formation of nanoparticles and nanorods distributed uniformly. Refractive index (n) of AlN film synthesized for 300 mtorr NP is found to be 1.83. The Eg of AlN films synthesized for 150, 225, 300, 375 mtorr NP are found to be 3.89, 3.24, 3.93, 3.95 eV respectively. Results reveal that the n, transmittance and Eg are associated with film thickness which is increased with increasing NP.

Keywords

Thin films, Energy band gap, Thermal evaporator, Nanorods.

Submitted at: June 9, 2020
Accepted at: Aug. 16, 2021

Citation

I. A. KHAN, B. HASSAN, S. A. HUSSAIN, S. PERVAIZ, Role of nitrogen pressure on structural and optical properties of AlN films synthesized by thermal evaporation, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 7-8, pp. 373-382 (2021)