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Role of thickness in physical properties of Cu2S thin films prepared by vacuum evaporation method

M. RAMYA1,* , S .GANESAN2

Affiliation

  1. Department of Physics, Sri Shakthi Institute of Engg. & Tech., Coimbatore 641 062, Tamil Nadu, India
  2. Department of Physics, Government College of Technology., Coimbatore 641 062 ,Tamil Nadu, India

Abstract

Transparent semi-conducting copper sulphide thin films with good crystallinity have been deposited on glass substrates by vacuum evaporation method. The synthesized Cu2S thin films were characterized using various techniques without any annealing treatment. Structural, optical and electrical properties of the films have been studied for different film thicknesses. Films prepared at relatively higher thickness is found to be high conductive in nature. Hall effect measurements were carried out to determine the electrical properties of the film. Hall measurements of the films showed p-type conduction nature with a carrier concentration in the range 1019–1022 cm−3 . It is found that the deposited lower thickness Cu2S films have particle size of the order of 207 nm. Optical measurements of the film were carried out to calculate band gap energy of the material. Current voltage characteristics of different film thicknesses have been studied and it is observed that in the low voltage region, the conduction current obeys Ohm's law. Photosensitivity of the material enhances with light intensity..

Keywords

Copper sulphide, grain size, P-type conduction, Hall -effect measurement.

Submitted at: May 31, 2012
Accepted at: Oct. 30, 2012

Citation

M. RAMYA, S .GANESAN, Role of thickness in physical properties of Cu2S thin films prepared by vacuum evaporation method, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 11-12, pp. 910-917 (2012)