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Room temperature sensitivity of Ta doped nanocrystalline ZnO films to NH 3 exposure

H. NICHEV1,* , O. ANGELOV1, M. KAMENOVA1, V. MIKLI2, D. DIMOVA-MALINOVSKA1

Affiliation

  1. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Centre for Materials Research, Tallinn Technical University, Tallinn, Estonia

Abstract

Undoped (ZnO) and doped with Ta (ZnO:Ta) films have been deposited by magnetron sputtering of a ZnO target and co-sputtering of the target with Ta chips on its surface respectively. The structural and optical properties of the films have been performed by X-ray Diffraction Spectroscopy (XRD), optical transmittance and reflectance measurements. The sensitivity of the undoped ZnO thin films and those doped with Ta (ZnO:Ta) to exposure to NH 3 was measured by the ratio of the resistivity in air to that in the presence of the target gas. A higher sensitivity was observed in the Ta doped ZnO film.. It is shown that ZnO thin films doped with Ta have a potential application as room temperature sensors..

Keywords

Thin films, ZnO, Optical bandgap, Gas sensors, Quartz crystal microbalance.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

H. NICHEV, O. ANGELOV, M. KAMENOVA, V. MIKLI, D. DIMOVA-MALINOVSKA, Room temperature sensitivity of Ta doped nanocrystalline ZnO films to NH 3 exposure, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1371-1374 (2009)