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Sapphire, SiC, AlN, Si and diamond-substrate material for GaN HEMT and LED

BHUBESH CHANDER JOSHI1,* , C. DHANAVANTRI1, D. KUMAR2

Affiliation

  1. Optoelectronic Devices Group, Central Electronics Engineering Research Institute (Council of Scientific and Industrial Research),Pilani (Rajasthan), 333031 India
  2. Electronic Science Department, Kurukshetra University, Kurukshetra

Abstract

Performance of AlGaN/GaN High Electron Mobility Transistor on Sapphire, Si, AlN, SiC and Diamond substrates are studied. AlGaN/GaN HEMT on Sapphire shows negative differential conductivity region, at large drain bias, due to large accumulation of heat in channel at gate drains edge. Remarkable improvement in characteristics is observed for HEMT devices on high thermal conducting SiC and Diamond substrate. No significant improvements in characteristics are observed for HEMT structure on Si and AlN substrate. Effect of rise in junction temperature of GaN LED on Sapphire is analyzed. Results show that, there is accumulation of heat in area between two electrodes..

Keywords

HEMT, LED, GaN, InGaN, AlGaN.

Submitted at: July 9, 2009
Accepted at: Aug. 7, 2009

Citation

BHUBESH CHANDER JOSHI, C. DHANAVANTRI, D. KUMAR, Sapphire, SiC, AlN, Si and diamond-substrate material for GaN HEMT and LED, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 8, pp. 1111-1116 (2009)