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Second-order optical susceptibility in doped III-V piezoelectric semiconductors in presence of magnetostatic field

P. AGHAMKAR1, BHAJAN LAL1,2,*

Affiliation

  1. Department of Physics, Chaudhary Devi Lal University, Sirsa-125055, India
  2. Department of Physics, Government Polytechnic for Women, Sirsa-125055, India

Abstract

A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III–V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of pump beam with internally generated density and acoustic perturbations. Effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 µm CO2 laser and efforts are made towards optimizing the doping level, applied magnetostatic field and pump intensity to achieve large value of second-order optical susceptibility and alteration of its sign. The enhancement and change of sign of second-order optical susceptibility in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field confirms them as potential candidate materials for the fabrication of nonlinear optical devices. In particular, at B0=14.1 T, the second-order susceptibility was found to be 3.4x 10-7 (SI unit) near resonance condition..

Keywords

Second-order susceptibility, Piezoelectricity, Magnetostatic field, Doped III-V semiconductor.

Submitted at: Sept. 20, 2010
Accepted at: Jan. 26, 2011

Citation

P. AGHAMKAR, BHAJAN LAL, Second-order optical susceptibility in doped III-V piezoelectric semiconductors in presence of magnetostatic field, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 1, pp. 41-48 (2011)