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Self-consistent 2-D numerical modeling and simulation of a uniformly doped nanoscale double-gate SOI n-MOSFET under illuminated condition for photodetection application

M. KABEER1,* , V. RAJAMANI2, S. BOSE3

Affiliation

  1. Department of Information Technology, B. S. AbdurRahman Crescent Engineering College, Chennai, Tamilnadu, India – 600 048
  2. Department of Electronics and Communication Engineering, Veltech Multitech Dr.Rangarajan Dr.Sakunthala Engineering College, Avadi, Chennai, Tamilnadu, India – 600 062
  3. Department of Computer Science and Engineering, Anna University, Chennai, Tamilnadu, India – 600 025

Abstract

A two-dimensional numerical modeling of a uniformly doped nanoscale Double-Gate SOI n-MOSFET under illuminated condition including quantum mechanical effects has been developed. A self-consistent solution of 2-D Poisson-Schrödinger equation has been obtained. Finite differential method is used in solving the Schrödinger equation using mode space approach due to which size of the problem is reduced and sufficient accuracy is obtained. Leibmann’s iteration method is used in solving Poisson equation with proper boundary conditions. The exact potential profile of the device under illuminated condition has been computed numerically. The electric field profile along the length and width of the channel and mobility of the carriers have also been studied extensively under illuminated condition to have an in depth analysis. Calculations are being carried out to examine the effect of illumination on the current-voltage characteristics, conduction band vs sub-band energy profile and sub-band electron density. The accuracy of the model has been verified by comparing the results with that calculated by nanomos 2.5 device simulator. Due to effect of photo generation, the device characteristics are strongly influenced. The proposed model is fairly accurate and can be used for accurate simulation of Opto Electronic Integrated Circuits (OEIC) using uniformly doped DG SOI n-MOSFET Photo detector..

Keywords

Nanoscale Double Gate SOI n-MOSFET, 2-D Poisson-Schrödinger, Finite differential method, Quantum mechanical effects, Photodetector.

Submitted at: Nov. 10, 2012
Accepted at: March 13, 2014

Citation

M. KABEER, V. RAJAMANI, S. BOSE, Self-consistent 2-D numerical modeling and simulation of a uniformly doped nanoscale double-gate SOI n-MOSFET under illuminated condition for photodetection application, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 378-386 (2014)