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Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters

S. LAZANU1, M. L. CIUREA1,* , I. LAZANU2

Affiliation

  1. National Institute of Materials Physics, POBox MG-7, Bucharest-Măgurele, Romania
  2. University of Bucharest, Faculty of Physics, POBox MG-11, Bucharest-Măgurele, Romania

Abstract

The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced..

Keywords

Defects, Silicon detectors, Iisovalent impurities, Radiation field, Radiation damage.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

S. LAZANU, M. L. CIUREA, I. LAZANU, Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2150-2154 (2009)