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I agree, do not show this message again.Sensibility of electrical parameters to the illumination intensity in solar cells
M. LOULOU1,* , M. K. AL TURKESTANI1, M. ABDELKRIM2, J-P. CHARLES3
Affiliation
- Department of Physics, College of Applied Sciences, Umm Al-Qura University, Makkah AL-Mukarramah. Saudi Arabia
- Optimization Laboratory, Faculté des Sciences de Tunis, Campus Universitaire – 1060 Tunis, Tunisia
- C2EA, LMOPS (UMR-7132), C2EA, Metz University - Supélec, 2, rue Edouard Belin, 57070 Metz, France
Abstract
The effect of illumination intensity on the solar cell parameters has been investigated based on the one-diode model. In this study we made measurements on (i) a typical monocrystalline silicon homostructure cell (blue c-Si SAT solar cell), which is considered as a reference ideal cell (high quality) , and (ii) a low quality front wall Cu2S-CdS heterostructure. The dependence of the cell parameters on illumination intensity for the range 20 - 100 mW/cm2 at T = 300 K has been investigated. It was found that the Vmax voltage at the maximum power point is located in the neighbourhood of Voc for the ideal silicon SAT solar cell, while for Cu2S-CdS cell, it was in the neighbourhood of f Voc , where f is the golden number conjugate. The maximum electrical output power delivered by the two cell types follows a linear variation with the illumination intensity level E. In the case of the ideal SAT solar cell, series resistance decayed exponentially when illumination intensities E increases while in the case of the Cu2S-CdS solar cell, this behaviour was observed for the shunt resistance..
Keywords
Photovoltaic Cell, Electrical parameters, Illumination conditions.
Submitted at: June 7, 2014
Accepted at: Sept. 11, 2014
Citation
M. LOULOU, M. K. AL TURKESTANI, M. ABDELKRIM, J-P. CHARLES, Sensibility of electrical parameters to the illumination intensity in solar cells, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 9-10, pp. 1121-1125 (2014)
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