"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

SiC Fabrication by carbothermal reduction of sepiolite

A. DEVEČERSKI1,* , M. POŠARAC1, A. EGELJA1, I. PONGRAC1, A. RADOSAVLJEVIĆ-MIHAJLOVIĆ1, B. MATOVIĆ1

Affiliation

  1. INN Vinča, Materials Department, P.O.Box 522, Belgrade, Serbia

Abstract

In this paper, the possibility of using sepiolite as Si precursor for low temperature synthesis of silicon carbide (SiC) via carbothermal-reduction reactions was studied. A sepiolite of Serbian origin and carbon (precursor-saccharose) as reducing agent were used. The green bodies with C/SiO2 = 7 ratio were carbonised at 1073K and heat-treated at 1673K (controlled Ar flow atmosphere). Phase evolution, phase content and weight loss were followed as a function of temperature and chemical activation processes of sepiolite. Starting materials and products have been characterized by means of XRD and SEM (EDS) investigations. The results show that sepiolite can be very effective source for obtaining of silicon carbide powders..

Keywords

SiC, Sepiolite, Carbothermal-reduction, Carbide.

Submitted at: Feb. 25, 2008
Accepted at: April 4, 2008

Citation

A. DEVEČERSKI, M. POŠARAC, A. EGELJA, I. PONGRAC, A. RADOSAVLJEVIĆ-MIHAJLOVIĆ, B. MATOVIĆ, SiC Fabrication by carbothermal reduction of sepiolite, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 4, pp. 876-879 (2008)