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Simulation and analysis on the property of aluminum back-surface-field of monocrystalline silicon solar cells

X．L．CAO1, Y. M. CHEN1,*

Affiliation

  1. School of Energy Science and Engineering, Central South University, Changsha410083, P. R. China

Abstract

The effects of thickness and doping profile of heavily-doped Aluminum Back-Surface-Field(Al-BSF), as well as the trap levels of impurities in Al-BSF, on electronic properties of n+ pp+ monocrystalline solar cells, were investigated by PC1D. The results show the electronic properties of the solar cells are hardly affected by the gradient of the doping profile of Al-BSF, but mainly depend on the Al/B atomic amount in Al-BSF. The optimum thickness of Al/B-BSF is about 10μm with the average Al/B atomic concentration of Al-BSF less than ~6.56×1018cm-3 . The effect of the oxygen trap level on the electronic properties relates to the back surface recombination velocity (BSRV) and the average Al/B atomic concentration..

Keywords

Al-BSF, Electronic property, Doping profile, The trap level.

Submitted at: Dec. 20, 2010
Accepted at: April 11, 2011

Citation

X．L．CAO, Y. M. CHEN, Simulation and analysis on the property of aluminum back-surface-field of monocrystalline silicon solar cells, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 4, pp. 432-438 (2011)