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Simulation model of multi-junction InxGa1-xN Solar Cells

WISAM J. AZIZ1,* , K. IBRAHIM2

Affiliation

  1. Nano-Optoelectronics Research Technology Laboratory
  2. School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract

In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 18 3 5 10 - ´ cm and 18 3 1 10 - ´ cm respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in VOC was observed from the lower values of total thickness.

Keywords

III-V materials, Multi-junction Solar cells, High efficiency.

Submitted at: July 1, 2009
Accepted at: July 23, 2009

Citation

WISAM J. AZIZ, K. IBRAHIM, Simulation model of multi-junction InxGa1-xN Solar Cells, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 7, pp. 1033-1037 (2009)