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S. TALEB1,* , B. SOUDINI1, I. LAGRAA1, H. ABID1
- Applied Materials Laboratory (AML), University of Sidi Bel Abbès, Sidi Bel Abbès, Algeria
In this work we report a modeling and numerical simulation of the carrier dynamics of ZnO/MgZnO of quantum dot lasers (QDLs). Our calculations are carried out by solving the set of seven rate equations for carriers and photons at four energy states using the fourth order of Runge-Kutta method in MATLAB software. Many properties of QDLs such as the photon density, output power and the small signal modulation response versus the time and injection current have been studied and discussed for the ground state (GS), first excited state (ES1), and second excited state (ES2).The modeling simulation validity is verified by comparison with other works. This work shows the advantage of ZnO/MgZnO QDLs to enhance the properties of laser..
Quantum dot laser, ZnO/MgZnO, Rate equations model.
Submitted at: Oct. 25, 2017
Accepted at: April 8, 2019
S. TALEB, B. SOUDINI, I. LAGRAA, H. ABID, Simulation of electronic and optical properties of ZnO/MgZnO quantum dot laser, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 3-4, pp. 185-193 (2019)
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