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Y. HAO1,* , Z. FENG1, Z. FULIN2, W. ZHIJIAN2, Q. CHEN3, H. YU1, Q. ZHOU1, J. YANG1
- College of Information Science & Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
- Zhongxing Telecommunication Equipment Corporation,Shenzhen 518057, China
- Department of Applied Science and Technology, Politecnico di Torino, Torino,10129, Italy
In field-assisted ion-migration (FAIM) process conventionally employed for glass-based planar lightwave circuit (PLC) devices fabrication, glass wafer temperature rise induced by Joule heat effect influent this process profoundly. In this context, obtaining glass temperature rising behavior comprehensively is of great importance. Based on thermal balance equation, simulation of glass wafer temperature rising behavior is carried respectively on for FAIM process in CV regime, CC regime, and CV-CC regime as well. Results show that glass wafer temperature rising behavior can be obtained with high efficiency and reasonable accuracy. Analysis demonstrate that this approach gives significant insight into phenomena related to Joule heat effects, it can also provide a practical tool for design and fabrication of glass-based PLC devices..
Glass, field-assisted ion-migration, Joule heat effect, Temperature rise.
Submitted at: Nov. 9, 2015
Accepted at: April 6, 2017
Y. HAO, Z. FENG, Z. FULIN, W. ZHIJIAN, Q. CHEN, H. YU, Q. ZHOU, J. YANG, Simulation of field-assisted ion-migration process for glass-based PLC fabrication: influence of joule heat effect, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 3-4, pp. 197-203 (2017)
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