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Simulation of high efficiency bifacial solar cells on n-type substrate with AFORS-HET

WANG LISHENG1,* , CHEN FENGXIANG1

Affiliation

  1. Department of physics science and technology, Wuhan University of Technology, Wuhan city, Hubei province, P.R.China. 430070

Abstract

Hetero-junctions of hydrogenated amorphous silicon and mono-crystalline silicon, a-Si:H/c-Si, are of technological interest in particular for highly efficient solar cells. Here the simulation and design of high efficiency bifacial solar cell on n-type substrate with AFORS-HET was presented. The influence and optimal results of the front contact, the back contact and the interface defect states were discussed. The computation result shows that the introduction of the intrinsic buffer layer between a-Si:H/c-Si hetero-junction is mainly used to decrease the interface states density. If Dit is lower than 1011cm-3, the undoped a-Si:H(i) buffer layer can be cancelled at the expense of the conversion efficiency just one percent lower compared to standard HIT solar cells..

Keywords

Hetero-junction solar cells, Interface defect states density, Work function, Simulation.

Submitted at: Dec. 6, 2010
Accepted at: Jan. 26, 2011

Citation

WANG LISHENG, CHEN FENGXIANG, Simulation of high efficiency bifacial solar cells on n-type substrate with AFORS-HET, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 1, pp. 81-88 (2011)