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Sn2Sb2S5 films for photovoltaic applications

A. GASSOUMI1,* , M. KANZARI1

Affiliation

  1. Laboratoire de Photovoltaïque et Matériaux Semiconducteurs -ENIT BP 37, Le belvédère 1002-Tunis

Abstract

In this paper we propose that Sn2Sb2S5 is one of the main candidates of thin film absorbers materials. Sulfosalt Sn2Sb2S5 thin films have been deposited on glass substrates by vacuum evaporation method. The pressure during evaporation was maintained at 10−5 Torr. The films were annealed in air atmosphere in the temperatures range 100-250°C. Two optical direct transitions were found. Absorption coefficients higher than 104 cm−1 were found. The X-ray diffraction analysis indicates that before and after annealing only the Sn2Sb2S5 phase is present. Sn2Sb2S5 thin films exhibit N-type conductivity after annealing. We present a model that helps to explain the evolution of photovoltaic effect..

Keywords

Sn2Sb2S5, Thin films, Optical properties, X-ray diffraction, Surface morphology.

Submitted at: March 5, 2009
Accepted at: April 28, 2009

Citation

A. GASSOUMI, M. KANZARI, Sn2Sb2S5 films for photovoltaic applications, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 414-420 (2009)