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Some optical properties of thermally deposited Sb2Se3:Sn thin films

M. S. IOVU1,* , D. V. HAREA1, E. P. COLOMEICO1

Affiliation

  1. Center of Optoelectronics of the Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-2028 Chisinau, Republic of Moldova

Abstract

The optical properties of amorphous Sb2Se3 and Sb2Se3:Snx (x=0.01, 0.5, 10 at. Sn %) prepared by vacuum evaporation on glass substrates was determined from transmission spectra. The band gap was found to be Eg=1.30 eV for amorphous Sb2Se3 and decrease with increasing of tin concentration up to Eg=1.0 eV for Sb2Se3:Sn10.0. The maximum modifications of the refractive index under the light irradiation Δn (Δn=0.20) occur for the composition Sb2Se3:Sn0.01. That allows us to conclude that doping of amorphous Sb2Se3 films with small concentrations of tin initiate the photostructural transformations under light irradiation, and make these materials suitable for registration of optical information..

Keywords

Amorphous materials, Optical transmission, Refractive index.

Submitted at: Feb. 25, 2008
Accepted at: April 4, 2008

Citation

M. S. IOVU, D. V. HAREA, E. P. COLOMEICO, Some optical properties of thermally deposited Sb2Se3:Sn thin films, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 4, pp. 862-866 (2008)