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Spatial frequency doubling of interference lithographic structure using two-layer chalcogenide photoresist

I. Z. INDUTNYI1,* , V. A. DAN’KO1, V. I. MYN’KO1, P. E. SHEPELIAVYI1, O. V. BEREZNYOVA1

Affiliation

  1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract

The low cost method for spatial frequency of the gratings doubling, have been developed. The method combine interference lithography with a spatial frequency doubling, based on vacuum evaporation of two layer As40S30Se30-As4Ge30S66 photoresist and wet etching only. Relief parameters and diffractions properties of the obtained structures were studied. This technology can be used for the fabrication of high-frequencies periodic structures on the substrates of the different materials (semiconductors, dielectrics, metals)..

Keywords

Spatial frequency doubling, Chalcogenide inorganic photoresist, Interference lithography.

Submitted at: June 2, 2011
Accepted at: Nov. 23, 2011

Citation

I. Z. INDUTNYI, V. A. DAN’KO, V. I. MYN’KO, P. E. SHEPELIAVYI, O. V. BEREZNYOVA, Spatial frequency doubling of interference lithographic structure using two-layer chalcogenide photoresist, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1467-1469 (2011)