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Spectroscopic ellipsometry study of amorphous GeSe thin films doped with Cd and Te

G. A. M. AMIN1,*

Affiliation

  1. NCRRT, P.O. Box 29-Nasr City, Cairo, Egypt

Abstract

Amorphous compositions of the system (Ge1Se9)85A15, where A is Cd or Te, were prepared in bulk form by melt quenching technique. Thin films of the bulk compositions were grown on glass substrates by thermal evaporation. The effect of Cd or Te addition on some optical parameters of Ge1Se9 was investigated in the spectral range from 300 nm to 650 nm using spectroscopic ellipsometry (SE) technique. The refractive index was found to decrease, in general, with increasing incident photon energy while the extinction coefficient was found to increase. Addition of Cd causes decrease of the refractive index while addition of Te causes its increase. The real and imaginary parts of the complex refractive index were calculated for compositions under investigation and discussed in reference to the energy band structure of the studied semiconducting materials..

Keywords

Amorphous, Semiconductors, Ellipsometry, Optical materials.

Submitted at: July 4, 2012
Accepted at: Oct. 30, 2012

Citation

G. A. M. AMIN, Spectroscopic ellipsometry study of amorphous GeSe thin films doped with Cd and Te, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 11-12, pp. 885-889 (2012)