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V. ȚUCUREANU1,2,* , A. MATEI1, M. C. POPESCU1, I. MIHALACHE1, A. AVRAM1, B. C. ȚÎNCU1, M. AVRAM1, D. MUNTEANU2
- National Institute for Research and Development in Microtehnologies (IMT-Bucharest), Erou Iancu Nicolae Street, 126A, 077190, Bucharest, Romania
- Transilvania University of Brasov, Department of Materials Science, 29 Eroilor Blvd, 500036, Brasov, Romania
Increasing electricity consumption along with increasing pollution degree has led to the search for alternatives both for electricity generation and for general lighting. In this context, starting with the discovery of the blue LED chips in 1994, solid-state lighting devices were developed using white LEDs obtained by combining blue chips with a YAG:Ce phosphor. Global research in the field of improving the luminescence properties of YAG:Ce phosphors is primarily intended to improve chromaticity coordinates, color rendering index and light efficiency by shifting the spectrum to red and for increasing light conversion efficiency. In this paper we present a co-precipitation method for improving of the optical properties of YAG:Ce phosphors by codoping with Gd3+ ions, and embedding in a PDMS matrix for the development of solid-state white light emission device. From a structural point of view, it was confirmed to obtain a phosphor with crystalline garnet structure and confirm the incorporation of phosphor into the PDMS matrix. Fluorescence spectroscopy revealed a spectral shift towards red as well as increase of the quantum yield, both for the Gd codoped phosphor and for the polymeric composite. Spectroscopic methods of analysis confirm the obtaining of a phosphor and a composite with improved properties for optoelectronic applications..
Phosphor, YAG:Ce,Gd, Composite, PDMS-YAG:Ce,Gd, White LED.
Submitted at: Jan. 7, 2019
Accepted at: Aug. 20, 2019
V. ȚUCUREANU, A. MATEI, M. C. POPESCU, I. MIHALACHE, A. AVRAM, B. C. ȚÎNCU, M. AVRAM, D. MUNTEANU, Spectroscopic techniques for the characterization of the YAG:Ce,Gd phosphors and PDMS-YAG:Ce,Gd composites, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 7-8, pp. 518-523 (2019)
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