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M. SALEEM1,* , Kh. S. KARIMOV2,3, A. RASHID1
Affiliation
- Government College of Science, Wahdat Road, Lahore-54570, Pakistan
- GIK Institute of Engineering Sciences and Technology, Topi, District Swabi-23640, Pakistan
- Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe-734025, Tajikistan
Abstract
An investigation was made on the properties of organic semiconductor resistance strain sensors, fabricated on the basis of quasi-one dimensional ion-radical salts of tetracyanoquinodimethane (TCNQ) crystals, namely, three phenyl methyl phosphonium (Ph3Me(TCNQ)2) and 2N methyl-methyl tiuronium (2CH3MT(TCNQ)2). It was observed that, the sensitivity of resistance strain sensors, based on twinned crystals, grown by chemical process is significantly large up to 4000-6000, as compared to uniform crystals. Elastic steel beams were employed to measure the sensitivity of these sensors..
Keywords
Strain sensor, Piezoresistive material, Phenyl methyl phosphonium-tetracyanoquinodimethane, 2N methyl-methyl tiuronium.
Submitted at: Jan. 8, 2014
Accepted at: May 7, 2015
Citation
M. SALEEM, Kh. S. KARIMOV, A. RASHID, Strain sensors based on twin and uniform crystals of TCNQ Ion-radical salts, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 5-6, pp. 720-726 (2015)
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