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Stress investigation in Ge-Te-In thin films



  1. Laboratory of Thin Films Technology, Department of Physics, University of Chemical Technology and Metallurgy, 8, St. Kl. Ohridsky Blvd., Sofia, 1756, Bulgaria


The present paper reports the effect of In addition on some mechanical characteristics in telluride thin films. The stress and stress relaxation were investigated by the bending method using silicon micro-machined cantilevers. The correlation between the stress, composition and structure of the freshly deposited thin films of the sections (GeTe3)100-xInx and (GeTe4)100-xInx was examined. The obtained results are related to some structural and mechanical parameters of glasses, such as the mean coordination number, density and compactness. The obtained results were related with some structural parameters studied by SEM, AFM, XRD and the transitions in the structure of covalent chalcogenide glasses at average coordination number of 2.4, influencing the dependences of the glass density, stress and stress relaxation on their composition. For all of the investigated chalcogenide films, the stress decreased, but did not change by type with time..


Chalcogenide materials, Thin films, Stress, Stress relaxation.

Submitted at: Aug. 26, 2019
Accepted at: June 16, 2020


VL. IVANOVA, Y. TRIFONOVA, P. PETKOV, Stress investigation in Ge-Te-In thin films, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 5-6, pp. 266-271 (2020)