Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
N. M. A HADIA1, M. M. WAKKAD1,* , E. KH. SHOKR1, Y. TAYA1
- Physics Department, Faculty of Science, Sohag University, Sohag, Egypt
Bulk alloys of CuIn1-xGaxSe2 with Ga – incorporation ratio x= Ga / (Ga + In) equal to 0.1, 0.2, 0.3, 0.4 and 0.6 have been prepared by the melt quench technique. The CuIn1-xGaxSe2 (CIGS) thin films have been deposited on clean microscope glass substrates with different thickness (50, 100, 150, 200 and 250 nm) using the thermally evaporated technique in a vacuum of 3x10-4 mbar from the prepared bulk material. XRD, SEM and EDAX were utilized in order to examine the structure, surface morphology and composition stoichiometry of CIGS samples. Effects of Ga – ratio, film thickness and annealing at 573 K for different periods of time (5 – 60 min.) on structural and optical properties have been depicted and explained. Some important structural and optical parameters were calculated and discussed..
Cu In1-xGax Se2 (CIGS), Bulk alloys, thin films, Annealing, Structural investigations, XRD, Optical properties.
Submitted at: April 26, 2018
Accepted at: Feb. 17, 2020
N. M. A HADIA, M. M. WAKKAD, E. KH. SHOKR, Y. TAYA, Structural and optical properties of CuIn1-xGaxSe2 thin films, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 1-2, pp. 42-54 (2020)
- Download Fulltext
- Downloads: 43 (from 36 distinct Internet Addresses ).