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Structural and optical properties of ZnO thin films deposited by electron beam evaporation with different annealing temperatures

HUA SHEN1, LINHUA XU2,* , GAIGE ZHENG2, JING SU2, RIHONG ZHU1

Affiliation

  1. Institute of Electronic Engineering and Photo-electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China
  2. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China

Abstract

In this work, ZnO thin films were prepared by electron beam evaporation and annealed at different annealing temperatures. The influence of annealing temperature on the structural and optical properties of the samples was studied. The structural properties of the samples were analyzed by X-ray diffraction (XRD) and atomic force microscopy. The photoluminescence was used to investigate the fluorescent properties of the samples. The results showed that the sample annealed at 300 ℃ had the best crystalline quality and optical quality. All the samples showed a strong ultraviolet emission peak and a wide green emission band. The green emission of the ZnO thin films was related to oxygen vacancy defects. With the increase of annealing temperature, the green emission increased while the ultraviolet emission gradually reduced. From the results, it is known that selecting a suitable annealing temperature is very important for obtaining high-quality ZnO thin films. (Received January 23, 2012; accepted April 11, 2013).

Keywords

ZnO thin film, Electron beam evaporation, Annealing temperature, Photoluminescence.

Submitted at: Jan. 23, 2012
Accepted at: April 11, 2013

Citation

HUA SHEN, LINHUA XU, GAIGE ZHENG, JING SU, RIHONG ZHU, Structural and optical properties of ZnO thin films deposited by electron beam evaporation with different annealing temperatures, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 3-4, pp. 244-248 (2013)