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Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells

Ö. PEHLİVAN1,* , O. YILMAZ1, A. O. KODOLBAŞ1, Ö. DUYGULU2, M. TOMAK3

Affiliation

  1. TÜBİTAK Ulusal Metroloji Enstitüsü (UME), 41470-Gebze, Kocaeli
  2. TÜBİTAK Marmara Research Center (MAM), Materials Institute, 41470-Gebze, Kocaeli
  3. Middle East Technical University, Faculty of Arts and Sciences, Department of Physics, 06800-Çankaya, Ankara

Abstract

We have utilized ex-situ spectroscopic ellipsometry and HRTEM to characterize the optical and structural properties of intrinsic a-Si:H thin layer that plays a key role for the improvement of the open circuit voltage in silicon heterojunction solar cells. Intrinsic a-Si:H films were deposited on (100) p-type CZ silicon wafers by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at 225 °C substrate temperature and deposition time ranges from 15 s to 1800 s. Observed changes in the imaginary part of pseudo dielectric constant, ε2, of c-Si spectrum with two peaks centered in 3.4 eV and 4.2 eV to a-Si:H which has an intermediate spectrum with a soft peak at about 4.2 eV has been analyzed with using effective medium approximation model..

Keywords

a-Si:H/c-Si heterojunction, Solar cell, PECVD, Spectroscopic ellipsometer, Effective medium approximation.

Submitted at: Dec. 18, 2012
Accepted at: Feb. 20, 2013

Citation

Ö. PEHLİVAN, O. YILMAZ, A. O. KODOLBAŞ, Ö. DUYGULU, M. TOMAK, Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 1-2, pp. 22-24 (2013)