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Structural investigation of Ge-As-Se glasses
M. V. POPOVYCH1,* , A. V. STRONSKI1, L. O. REVUTSKA2, K. V. SHPORTKO1, Y. POLISHCHUK1, O. P. PAIUK1, V. YU. GORONESKUL1
- V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, 41 Nauki Ave., 03028 Kyiv, Ukraine
- National Technical University of Ukraine,“Igor Sikorsky Kyiv Polytechnic Institute”, 37 Peremohy Ave., 03056 Kyiv, Ukraine
In the present paper the amorphous Ge-As-Se alloys have been studied by X-ray diffraction and Raman spectroscopy. The experimental X-ray diffraction pattern confirmed an amorphous nature of studied samples. The obtained radial distribution functions have manifested the evolution of the short range in Ge-As-Se system. The positions of the nearest-neighbour bond length r1 changed from 2.32 to 2.45 Å with the increase of Ge content. Raman spectra of Ge-As-Se samples revealed that the backbones of the studied samples consist of AsSe3/2 pyramidal units, edge- and corner-shared GeSe4 tetrahedral units and structural units containing homopolar bonds. For Se-rich samples Se chains are present. Сompositional dependencies of characteristic constituent Raman bands intensities showed that Ge-As-Se samples contain different nanophases whose concentration is changing with the composition..
Chalcogenide glasses, X-ray diffraction, Radial distribution function, Raman spectroscopy, Nanophases.
Submitted at: May 9, 2022
Accepted at: Feb. 14, 2023
M. V. POPOVYCH, A. V. STRONSKI, L. O. REVUTSKA, K. V. SHPORTKO, Y. POLISHCHUK, O. P. PAIUK, V. YU. GORONESKUL, Structural investigation of Ge-As-Se glasses, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 1-2, pp. 49-55 (2023)
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