"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Structural phase transition and optoelectronic properties of ZnS under pressure

N. ULLAH1, H. ULLAH2, G. MURTAZA2,* , R. KHENATA3, S. ALI2

Affiliation

  1. Department of Physics G. D. C. Darra Adam Khel, F. R. Kohat, KPK, Pakistan
  2. Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar
  3. Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000, Algeria

Abstract

ZnS is a wide band gap semiconductor and widely applied in semiconductor industry. In the present study, first principle calculations are performed to obtain the phase transition pressure and optoelectronic response of ZnS under pressure. Calculated transition pressure is in good agreement with the recent experimental results. ZnS has a direct bandgap in zincblende phase and indirect in rocksalt phase. In both phases the chemical bonding is covalent. Optical properties like dielectric function and frequency dependent reflectivity under pressure are calculated and compared with the previous results..

Keywords

DFT, FP-LAPW, ZnS, Pressure effect, Optoelectronics.

Submitted at: Jan. 13, 2015
Accepted at: Sept. 9, 2015

Citation

N. ULLAH, H. ULLAH, G. MURTAZA, R. KHENATA, S. ALI, Structural phase transition and optoelectronic properties of ZnS under pressure, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 9-10, pp. 1272-1277 (2015)